Title :
Monte carlo simulations of p- and n-channel dual-gate Si MOSFETs at the limits of scaling
Author :
Frank, D.J. ; Laux, S.E. ; Fischetti, M.V.
Author_Institution :
IBM Research Division, T. J. Watson Research Center
fDate :
6/15/1905 12:00:00 AM
Keywords :
Charge carrier processes; Circuit simulation; FETs; Geometry; MOSFETs; Monte Carlo methods; Quantization; Thickness control; Transconductance; Voltage;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009568
