Title :
Novel cross-point resistive switching memory with self-formed schottky barrier
Author :
Jo, Minseok ; Seong, Dong-jun ; Kim, Seonghyun ; Lee, Joonmyoung ; Lee, Wootae ; Park, Ju-Bong ; Park, Sangsoo ; Jung, Seungjae ; Shin, Jungho ; Lee, Daeseok ; Hwang, Hyunsang
Author_Institution :
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Abstract :
By characterizing the resistive switching state in Al/PCMO device, we propose, for the first time, the feasibility of cross-point memory without any selection device. Self-formed Schottky barrier by redox reaction at Al/PCMO interface can be used as a selection device. Using self-formed Schottky barrier, we can build simple 4F2 cross-point memory array without additional process steps.
Keywords :
Schottky barriers; random-access storage; 4F2 cross-point memory array; Al/PCMO device; cross-point resistive switching memory; redox reaction; self-formed Schottky barrier; Arrays; Electrodes; Nonhomogeneous media; Resistance; Switches; Voltage control;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556121
