Title :
Non-volatile spin-transfer torque RAM (STT-RAM): Data, analysis and design requirements for thermal stability
Author :
Driskill-Smith, A. ; Watts, S. ; Nikitin, V. ; Apalkov, D. ; Druist, D. ; Kawakami, R. ; Tang, X. ; Luo, X. ; Ong, A. ; Chen, E.
Author_Institution :
Grandis, Inc., Milpitas, CA, USA
Abstract :
The thermal stability of STT-RAM is measured by multiple techniques and compared with theory. The read disturb rate is found to be determined by the standby thermal stability, but the error rate at target read currents is higher than expected. The implication for the design of 1 Gb STT-RAM is that 10 year room temperature data retention as well as 1000 FIT read disturb error rate requires thermal stability of greater than 75.
Keywords :
random-access storage; thermal stability; STT-RAM; design requirements; nonvolatile spin-transfer torque RAM; read disturb rate; standby thermal stability; Current measurement; Error analysis; Magnetic tunneling; Stability analysis; Switches; Thermal stability; Torque; STT-RAM; spin transfer torque; spintronics;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556124
