Title :
AlGaAs/GaAs Pnp HBT with 54 GHz Fmax and application to high-performance complementary technology
Author :
Hill, D.G. ; Kim, T.S. ; Tserng, H.Q.
Author_Institution :
Texas Instruments Central Research Laboratories
fDate :
6/15/1905 12:00:00 AM
Keywords :
Electrons; Gain; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices; Solid state circuits;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009582
