Title :
Low-k etching using CF3I, a path to overcome current BEOL integration issues
Author :
Gildea, Adam J. ; Long, Justin C. ; Eisenbraun, Eric ; Omarjee, Vincent ; Stafford, Nathan ; Doniat, François ; Dussarrat, Christian
Author_Institution :
Coll. of Nanoscale Sci. & Eng., Univ. at Albany-SUNY, Albany, NY, USA
Abstract :
CF3I, a low greenhouse warming potential gas, has been used for low-k etching using an ICP reactor. Key parameters such as reactor pressure, bias power, ICP power and total gas flow rate were investigated to develop an optimized etch process. A comparison with standard fluorocarbons such as CF4, C4F8 or CF3H has been made to illustrate the performances of this low environmental impact chemistry.
Keywords :
air pollution; chemical reactors; etching; BEOL integration issues; CF3I; ICP power; ICP reactor; bias power; environmental impact chemistry; greenhouse warming potential gas; low-k etching; reactor pressure; standard fluorocarbons; total gas flow rate; Etching; Films; Gases; Iterative closest point algorithm; Plasmas; Resists; Silicon; BEOL; CF3I; Etching; Low-k; Plasma;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2011 22nd Annual IEEE/SEMI
Conference_Location :
Saratoga Springs, NY
Print_ISBN :
978-1-61284-408-4
Electronic_ISBN :
1078-8743
DOI :
10.1109/ASMC.2011.5898178
