DocumentCode :
1725020
Title :
GaInP/GaAs HBTs for high-speed integrated circuit applications
Author :
Ho, W.J. ; Chang, M.F. ; Sailer, A. ; Zampardi, P. ; Deakin, D. ; McDermott, B. ; Pierson, R. ; Higgins, J.A.
Author_Institution :
Rockwell International Science Center
fYear :
1993
fDate :
6/15/1905 12:00:00 AM
Firstpage :
63
Lastpage :
64
Keywords :
Circuit noise; Electrical resistance measurement; Frequency conversion; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; High speed integrated circuits; Integrated circuit noise; Noise measurement; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1993. 51st Annual
Type :
conf
DOI :
10.1109/DRC.1993.1009583
Filename :
1009583
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1725020