Title :
Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm
Author :
Bangsaruntip, S. ; Majumdar, A. ; Cohen, G.M. ; Engelmann, S.U. ; Zhang, Y. ; Guillorn, M. ; Gignac, L.M. ; Mittal, S. ; Graham, W.S. ; Joseph, E.A. ; Klaus, D.P. ; Chang, J. ; Cartier, E.A. ; Sleight, J.W.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We demonstrate the world´s first top-down CMOS ring oscillators (ROs) fabricated with gate-all-around (GAA) silicon nanowire (NW) FETs having diameters as small as 3 nm. NW capacitance shows size dependence in good agreement with that of a cylindrical capacitor. AC characterization shows enhanced self-heating below 5 nm.
Keywords :
CMOS integrated circuits; nanowires; oscillators; 25-stage CMOS ring oscillators; AC characterization; cylindrical capacitor; gate-all-around silicon nanowire FET; self-heating; top-down CMOS ring oscillators; CMOS integrated circuits; Capacitance; Delay; FETs; International Electron Devices Meeting; Logic gates; Ring oscillators;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556136
