Title :
Influence of launching energy on collector transport in InP/InGaAs double-heterojunction bipolar transistors
Author :
Kurishima, K. ; Kobayashi, T. ; Matsuoka, Y.
Author_Institution :
NTT LSI Laboratories
fDate :
6/15/1905 12:00:00 AM
Keywords :
Bipolar transistors; Doping; Electrons; Indium gallium arsenide; Indium phosphide; Laboratories; Large scale integration; MOCVD; Satellites; Testing;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009591
