• DocumentCode
    1725210
  • Title

    Influence of launching energy on collector transport in InP/InGaAs double-heterojunction bipolar transistors

  • Author

    Kurishima, K. ; Kobayashi, T. ; Matsuoka, Y.

  • Author_Institution
    NTT LSI Laboratories
  • fYear
    1993
  • fDate
    6/15/1905 12:00:00 AM
  • Firstpage
    83
  • Lastpage
    84
  • Keywords
    Bipolar transistors; Doping; Electrons; Indium gallium arsenide; Indium phosphide; Laboratories; Large scale integration; MOCVD; Satellites; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1993. 51st Annual
  • Type

    conf

  • DOI
    10.1109/DRC.1993.1009591
  • Filename
    1009591
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1725210