Title :
SiC technologies for future energy electronics
Author :
Kimoto, Tsunenobu
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
Abstract :
High-efficiency electric power conversion is an essential technology for energy saving. The efficiency of power converters/inverters relies on the performance of power semiconductor devices employed in the power electronic systems. Silicon carbide (SiC) is a newly-emerging wide bandgap semiconductor, by which high-voltage, low-loss power devices can be realized owing to its superior properties. This paper reviews recent progress in SiC material and device technologies for power device applications. Benefits and remaining issues of SiC power devices are highlighted.
Keywords :
invertors; power convertors; power semiconductor devices; silicon compounds; electric power conversion; energy electronics; energy saving; power converters/inverters; power electronic systems; power semiconductor devices; Doping; Insulated gate bipolar transistors; Inverters; Power MOSFET; Silicon; Silicon carbide; Schottky barrier diode; breakdown; on-resistance; power MOSFET; power device; silicon carbide;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556137
