DocumentCode
1725289
Title
Analog ICs simulations using space charge waves in two-valley semiconductor films
Author
García-B, Abel ; Grimalsky, Volodymir ; Gutiérrez-D, Edmundo
Author_Institution
Dept. of Electron., INAOE, Puebla, Mexico
fYear
2005
Firstpage
239
Lastpage
242
Abstract
Analog ICs simulations using space charge waves in two-valley semiconductor for microwave and millimeter range signal processing is presented. The formulation incorporates the full set of Maxwell´s equations and the equations of motion of carriers based on a two-valley fully specified model providing a quantitative description of the space charge waves in thin-film n-GaAs. Numerical solutions to the system of equations indicate that the propagation and amplification of space charge waves in the thin film for four signals with different frequencies is possible. The present formulation can also find application where we need to know the interaction of electromagnetic waves and charge carriers.
Keywords
III-V semiconductors; Maxwell equations; analogue integrated circuits; carrier mobility; circuit simulation; gallium arsenide; integrated circuit modelling; semiconductor thin films; GaAs; Maxwell equations; analog integrated circuit simulation; carrier motion; microwave range signal processing; millimeter range signal processing; space charge waves; two-valley semiconductor films; Differential equations; Electromagnetic propagation; Electromagnetic scattering; Frequency; Maxwell equations; Semiconductor films; Semiconductor thin films; Signal processing; Space charge; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE-NEWCAS Conference, 2005. The 3rd International
Print_ISBN
0-7803-8934-4
Type
conf
DOI
10.1109/NEWCAS.2005.1496737
Filename
1496737
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