• DocumentCode
    1725289
  • Title

    Analog ICs simulations using space charge waves in two-valley semiconductor films

  • Author

    García-B, Abel ; Grimalsky, Volodymir ; Gutiérrez-D, Edmundo

  • Author_Institution
    Dept. of Electron., INAOE, Puebla, Mexico
  • fYear
    2005
  • Firstpage
    239
  • Lastpage
    242
  • Abstract
    Analog ICs simulations using space charge waves in two-valley semiconductor for microwave and millimeter range signal processing is presented. The formulation incorporates the full set of Maxwell´s equations and the equations of motion of carriers based on a two-valley fully specified model providing a quantitative description of the space charge waves in thin-film n-GaAs. Numerical solutions to the system of equations indicate that the propagation and amplification of space charge waves in the thin film for four signals with different frequencies is possible. The present formulation can also find application where we need to know the interaction of electromagnetic waves and charge carriers.
  • Keywords
    III-V semiconductors; Maxwell equations; analogue integrated circuits; carrier mobility; circuit simulation; gallium arsenide; integrated circuit modelling; semiconductor thin films; GaAs; Maxwell equations; analog integrated circuit simulation; carrier motion; microwave range signal processing; millimeter range signal processing; space charge waves; two-valley semiconductor films; Differential equations; Electromagnetic propagation; Electromagnetic scattering; Frequency; Maxwell equations; Semiconductor films; Semiconductor thin films; Signal processing; Space charge; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE-NEWCAS Conference, 2005. The 3rd International
  • Print_ISBN
    0-7803-8934-4
  • Type

    conf

  • DOI
    10.1109/NEWCAS.2005.1496737
  • Filename
    1496737