Title :
Electrical conduction and dielectric properties of CuI-Cu2 O-MoO3 glasses
Author :
Lee, J.-H. ; Chae, H.I. ; Jeong, S.H. ; Lim, K.J. ; Park, S.G.
Author_Institution :
Chungbuk Nat. Univ., Seoul, South Korea
Abstract :
It is shown that the glasses in the CuI-Cu2O-MoO3 system can be obtained by rapid quenching between copper plates. The glass-forming region of this system is in the range of CuI (20-40 mol.%), Cu2O (30-40 mol.%), and MoO3 (30-40 mol.%). These glasses have ionic conductivity as high as 10-2 S/m at room temperature, and the conductivities increase with increasing CuI content. The values of activation energy for conduction are slightly larger than those for dielectric relaxation. Most of the glasses show fairly narrow spectra for which the parameter β ranges from 0.81 to 0.92. It is assumed that the dielectric relaxation of these glasses may be Maxwell-Wagner type rather than ionic polarization
Keywords :
copper compounds; dielectric losses; dielectric relaxation; halide glasses; ionic conduction in solids; molybdenum compounds; rapid solidification; superionic conducting materials; 10-2 S/m; CuI-Cu2O-MoO3 glasses; Maxwell-Wagner relaxation; activation energy; dielectric loss; dielectric properties; dielectric relaxation; electrical conduction; glass-forming region; ionic conductivity; ionic polarization; loss tangent; rapid quenching; temperature dependence; Chemical industry; Conductivity measurement; Copper; Crystallization; Dielectric loss measurement; Dielectric measurements; Glass; Grain boundaries; Raw materials; Temperature distribution;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1992. Annual Report. Conference on
Conference_Location :
Victoria, BC
Print_ISBN :
0-7803-0565-5
DOI :
10.1109/CEIDP.1992.283240
