DocumentCode
1725341
Title
2010 VLSI technology symposium
fYear
2010
Firstpage
1
Lastpage
2
Abstract
The following topics are dealt with: VLSI technology; advanced CMOS; reliability; stability; MRAM; x-point RRAM; ultra thin body FDSOI; process technology; 3D integration; NAND flash memory; design enablement; heterogenous integration; DRAM; PCRAM; and GeMOSFET.
Keywords
CMOS integrated circuits; MOSFET; VLSI; integrated circuit design; integrated circuit reliability; random-access storage; silicon-on-insulator; stability; 3D integration; DRAM; GeMOSFET; MRAM; NAND flash memory; PCRAM; VLSI technology; advanced CMOS; design enablement; heterogenous integration; process technology; reliability; stability; ultra thin body FDSOI; x-point RRAM;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location
Honolulu
Print_ISBN
978-1-4244-5451-8
Type
conf
DOI
10.1109/VLSIT.2010.5556141
Filename
5556141
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