DocumentCode
1725408
Title
A fully-integrated dual-band VCO with power controlled by body voltage in 130nm CMOS/SOI
Author
Geynet, Lionel ; De Foucauld, Emeric ; Vincent, Pierre ; Jacquemod, Gilles
Author_Institution
CEA-LETI, Grenoble, France
fYear
2005
Firstpage
195
Lastpage
198
Abstract
In this paper, a dual-band VCO for wireless applications in CMOS/SOI technology using body voltage to control power consumption and phase noise performance is presented. A new architecture for multi-standards applications is proposed. To our knowledge, this is the first structure using this method to control VCO core current. Two standards are covered by this structure, Bluetooth (2.45GHz) and 802.11a (5.8GHz). The VCO´s tuning range can vary from 2.45GHz up to 5.8GHz. The main idea is to use only two MOS varactor to cover the entire frequency span. The first one is needed to get the matched frequency variation and the second one to adjust the oscillation frequency. The realisation of such VCO is possible thanks to CMOS/SOI technology advantages, high-Q passives and body voltage biasing that allows changing current and power dissipation in the VCO core. At 200kHz offset, the measured phase noise is -94dBc/Hz and -96dBc/Hz at 5.7GHz and 2.45GHz respectively.
Keywords
CMOS analogue integrated circuits; UHF oscillators; integrated circuit design; microwave oscillators; silicon-on-insulator; varactors; voltage-controlled oscillators; 130 nm; 2.45 to 5.8 GHz; CMOS-SOI technology; MOS varactors; VCO core current control; body voltage; fully-integrated dual-band VCO; oscillation frequency; phase noise performance; power consumption control; voltage-controlled oscillators; Bluetooth; CMOS technology; Dual band; Energy consumption; Frequency; Phase noise; Tuning; Varactors; Voltage control; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE-NEWCAS Conference, 2005. The 3rd International
Print_ISBN
0-7803-8934-4
Type
conf
DOI
10.1109/NEWCAS.2005.1496742
Filename
1496742
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