DocumentCode :
1725532
Title :
a-Si thin film transistors using dilute-gas plasma-enhanced chemical vapor deposition
Author :
Wright, S.L. ; Rothwell, M.B. ; Souk, J.H. ; Kuo, Y.
Author_Institution :
IBM Thomas J. Watson Research Center
fYear :
1993
fDate :
6/15/1905 12:00:00 AM
Firstpage :
107
Lastpage :
108
Keywords :
Chemical vapor deposition; Displays; Insulation; Metal-insulator structures; Plasma chemistry; Plasma materials processing; Process design; Thin film transistors; Vehicle safety; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1993. 51st Annual
Type :
conf
DOI :
10.1109/DRC.1993.1009602
Filename :
1009602
Link To Document :
بازگشت