• DocumentCode
    1725532
  • Title

    a-Si thin film transistors using dilute-gas plasma-enhanced chemical vapor deposition

  • Author

    Wright, S.L. ; Rothwell, M.B. ; Souk, J.H. ; Kuo, Y.

  • Author_Institution
    IBM Thomas J. Watson Research Center
  • fYear
    1993
  • fDate
    6/15/1905 12:00:00 AM
  • Firstpage
    107
  • Lastpage
    108
  • Keywords
    Chemical vapor deposition; Displays; Insulation; Metal-insulator structures; Plasma chemistry; Plasma materials processing; Process design; Thin film transistors; Vehicle safety; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1993. 51st Annual
  • Type

    conf

  • DOI
    10.1109/DRC.1993.1009602
  • Filename
    1009602