Title :
Demonstrating the potential of 6h-silicon carbide for power devices
Author :
Palmour, J.W. ; Edmond, J.A. ; Carter, C.H., Jr.
Author_Institution :
Cree Research, Inc.
fDate :
6/15/1905 12:00:00 AM
Keywords :
Breakdown voltage; Current density; Doping; Electric breakdown; MOSFETs; Rectifiers; Silicon carbide; Temperature; Thermal conductivity; Thyristors;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009604
