Title :
High voltage 6H-SiC rectifiers: prospects and progress
Author :
Neudeck, Philip G. ; Larkin, David J. ; Powell, J.Anthony ; Matus, Lawrence G.
Author_Institution :
NASA Lewis Research Center
fDate :
6/15/1905 12:00:00 AM
Keywords :
Fabrication; NASA; Ohmic contacts; Passivation; Rectifiers; Schottky diodes; Semiconductor diodes; Silicon carbide; Thermal conductivity; Voltage;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009605