DocumentCode :
1725605
Title :
High voltage 6H-SiC rectifiers: prospects and progress
Author :
Neudeck, Philip G. ; Larkin, David J. ; Powell, J.Anthony ; Matus, Lawrence G.
Author_Institution :
NASA Lewis Research Center
fYear :
1993
fDate :
6/15/1905 12:00:00 AM
Firstpage :
116
Lastpage :
117
Keywords :
Fabrication; NASA; Ohmic contacts; Passivation; Rectifiers; Schottky diodes; Semiconductor diodes; Silicon carbide; Thermal conductivity; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1993. 51st Annual
Type :
conf
DOI :
10.1109/DRC.1993.1009605
Filename :
1009605
Link To Document :
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