• DocumentCode
    1725605
  • Title

    High voltage 6H-SiC rectifiers: prospects and progress

  • Author

    Neudeck, Philip G. ; Larkin, David J. ; Powell, J.Anthony ; Matus, Lawrence G.

  • Author_Institution
    NASA Lewis Research Center
  • fYear
    1993
  • fDate
    6/15/1905 12:00:00 AM
  • Firstpage
    116
  • Lastpage
    117
  • Keywords
    Fabrication; NASA; Ohmic contacts; Passivation; Rectifiers; Schottky diodes; Semiconductor diodes; Silicon carbide; Thermal conductivity; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1993. 51st Annual
  • Type

    conf

  • DOI
    10.1109/DRC.1993.1009605
  • Filename
    1009605