A low voltage CMOS bandgap reference

Author

Yeong-Tsair Lin ; Chung, Wen-Yaw ; Wu, Dong-Shiu ; Ho-Cheng Lin ; Lin, Ho-Cheng

Author_Institution

Dept. of Electron. Eng., Chung Yuan Christian Univ., Chung-li, Taiwan

fYear

2005

Firstpage

227

Lastpage

230

Abstract

In this paper, a low voltage bandgap reference (LVBR) is proposed and analyzed. An nMOS arrangement folded operational transconductance amplifier (OTA) is developed for the LVBR. From the Hspice simulation results, the proposed LVBR can be operated with sub-1V supply. The LVBR circuit, occupied an area of 0.12 mm², is design and fabricated in a doubly-poly quadruple-metal 0.35-μm CMOS process. The circuit functions properly with minimum supply voltage of 0.88 V and consumes a power dissipation of 25 μW. The circuit also provides a temperature coefficient of 20 ppm/K over a temperature range from -20 to 100°C.

Keywords

CMOS analogue integrated circuits; integrated circuit design; low-power electronics; operational amplifiers; reference circuits; -20 to 100 C; 0.35 micron; 0.88 V; 25 muW; CMOS process; LVBR circuit; low voltage bandgap reference; nMOS arrangement; operational transconductance amplifiers; CMOS memory circuits; CMOS process; CMOS technology; Circuit simulation; Low voltage; Operational amplifiers; Photonic band gap; Temperature distribution; Temperature sensors; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

IEEE-NEWCAS Conference, 2005. The 3rd International

Print_ISBN

0-7803-8934-4

Type

conf

DOI

10.1109/NEWCAS.2005.1496749

Filename

1496749