• DocumentCode
    1725633
  • Title

    Charge dynamics in irradiated polymers

  • Author

    Sessler, G.M.

  • Author_Institution
    Tech. Univ., Darmstadt, Germany
  • fYear
    1992
  • Firstpage
    23
  • Lastpage
    42
  • Abstract
    Recent progress in the field of charge storage and charge transport in polymers irradiated with partially penetrating electron beams is discussed. The analytical model used to describe these phenomena takes the following physical parameters and processes into consideration: charge and energy deposition profiles, ohmic relaxation due to the radiation-induced conductivity, charge drift due to a finite carrier mobility, deep trapping without release, and trap filling due to a finite trap density. Experiments with the laser-induced pressure-pulse method on several high-resistivity polymers yield the location of the peak of the charge layers and their shape as function of injected charge density, time, and annealing conditions. The experimental results are interpreted with the analytical model for realistic values of the required physical parameters
  • Keywords
    annealing; carrier mobility; electrical conductivity of amorphous semiconductors and insulators; electron beam effects; electron traps; hole traps; polymers; analytical model; annealing; carrier mobility; charge density; charge deposition profile; charge drift; charge storage; charge transport; deep trapping; energy deposition profiles; high-resistivity polymers; irradiated polymers; laser-induced pressure-pulse method; ohmic relaxation; partially penetrating electron beams; physical parameters; radiation-induced conductivity; trap density; trap filling; Analytical models; Charge carrier processes; Conductivity; Electron beams; Electron traps; Filling; Laser modes; Laser theory; Polymers; Shape;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation and Dielectric Phenomena, 1992. Annual Report. Conference on
  • Conference_Location
    Victoria, BC
  • Print_ISBN
    0-7803-0565-5
  • Type

    conf

  • DOI
    10.1109/CEIDP.1992.283252
  • Filename
    283252