High voltage implanted RESURF p-LDMOS using BICMOS technology

Author

Zhou, Ming-Jiang ; De Bruycker, A. ; Van Calster, A. ; Witters, J.

Author_Institution

University of Twente

fYear

1993

fDate

6/15/1905 12:00:00 AM

Firstpage

120

Lastpage

121

Keywords

BiCMOS integrated circuits; Boron; CMOS technology; Diodes; Doping profiles; Electric breakdown; Implants; Impurities; Information systems; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1993. 51st Annual

Type

DOI

10.1109/DRC.1993.1009607

Filename

1009607

Link To Document