• DocumentCode
    1725675
  • Title

    Modeling dielectric dispersion by the relaxation method

  • Author

    Al-Refaie, S.N.

  • Author_Institution
    Dept. of Electron. Eng., Yarmouk Univ., Irbid, Jordan
  • Volume
    2
  • fYear
    2004
  • Firstpage
    517
  • Abstract
    The RTD corresponding to multiple-arc approach has been employed to investigate the effect of sintering temperature on the characteristics of metal-oxide varistor (MOV) dielectrics. The analysis has revealed the probable existence of phase transition in MOV near 700°C temperature. The separated polarization corresponding to ZnO grains and additive oxide diminishes at higher temperature, and merges into one category of polarization presumably dominated by the additive oxide modified by the shunting effect of ZnO grains.
  • Keywords
    II-VI semiconductors; ceramics; dielectric materials; dielectric polarisation; permittivity; sintering; solid-state phase transformations; varistors; zinc compounds; 700 degC; ZnO; ZnO grains; additive oxide; dielectric dispersion; metal-oxide varistor dielectrics; multiple arc method; phase transition; polarization; relaxation method; relaxation time distribution; shunting effect; sintering temperature; Artificial intelligence; Ceramics; Dielectric constant; Dielectric measurements; Dispersion; Frequency; Heat treatment; Polarization; Relaxation methods; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid Dielectrics, 2004. ICSD 2004. Proceedings of the 2004 IEEE International Conference on
  • Print_ISBN
    0-7803-8348-6
  • Type

    conf

  • DOI
    10.1109/ICSD.2004.1350482
  • Filename
    1350482