Title :
Electrical characteristics of NO nitrided SiO2 grown on p-type 4H-SiC
Author :
Li, H.F. ; Dimitrijev, S. ; Harrison, H.R. ; Sweatman, D. ; Tanner, P.
Author_Institution :
Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia
Abstract :
This paper presents the results of NO nitridation of SiO2 grown on p-type 4H-SiC. NO nitridation has a beneficial effect on the quality of the oxides grown on p-type 4H-SiC. The C-V curves become smoother and sharper after NO annealing. Frequently observed interface ledge is also removed from NO annealed samples
Keywords :
annealing; nitridation; oxidation; semiconductor-insulator boundaries; silicon compounds; C-V curve; NO; NO nitridation; SiO2 oxide growth; SiO2-SiC; annealing; electrical characteristics; interface ledge; p-type 4H-SiC substrate; Annealing; Capacitance-voltage characteristics; Doping; Electric variables; Frequency; Intersymbol interference; Oxidation; Petroleum; Silicon carbide; Tail;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.632915
