DocumentCode :
1725707
Title :
Aging model of polyethylene-based materials for HV cables founded on damage inception and growth from air-filled voids
Author :
Mazzanti, G. ; Montanari, G.C. ; Serra, S.
Author_Institution :
Dept. of Electr. Eng., Bologna Univ., Italy
Volume :
2
fYear :
2004
Firstpage :
525
Abstract :
In this paper, the aging of polyethylene-based materials for HV cables is addressed to inception and growth of damage from microscopic defects like air-filled microvoids. Such process is considered as divided in three subsequent phases: accumulation of electrons at PE-void interface and relevant injection in the air-filled void, hot-electron avalanche production in air, damage accumulation in PE due to avalanches. The rate of production of hot electrons inside the void is derived by solving the electron diffusion equation in the energy-time domain, and the growth rate of damage in polyethylene due to hot-electron discharges at the void-polymer interface is evaluated estimating local bond-breaking produced by hot electrons. An application of the proposed aging model to a PE-based material in typical working conditions for HVDC cables, including life estimation as a function of void size and applied electric field, is also presented.
Keywords :
ageing; avalanche breakdown; carrier lifetime; electron avalanches; hot carriers; noncrystalline defects; polymer insulators; power cable insulation; time-domain analysis; HVDC cables; PE-void interface; aging model; air-filled voids; bond-breaking; damage accumulation; damage inception; electric field; electron diffusion equation; energy-time domain analysis; hot-electron avalanche production; hot-electron discharges; life estimation; microscopic defects; microvoids; polyethylene-based materials; void size; Aging; Cables; Diffusion bonding; Electrons; Employee welfare; Equations; HVDC transmission; Microscopy; Polyethylene; Production;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid Dielectrics, 2004. ICSD 2004. Proceedings of the 2004 IEEE International Conference on
Print_ISBN :
0-7803-8348-6
Type :
conf
DOI :
10.1109/ICSD.2004.1350484
Filename :
1350484
Link To Document :
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