A SOM approach to the failure physics of optoelectronic devices

Author

Montangero, Paolo ; Azzini, Giuseppe A. ; Liberatore, Michele ; Mancini, Maria ; Pederzini, Elisa ; Serra, Laura

Author_Institution

Centro Studi e Lab. Telecommunicazioni SpA, Torino, Italy

fYear

1993

Firstpage

380

Lastpage

385

Abstract

The use of optical beam induced current (OBIC) and photoluminescence (PL) implemented in a scanning optical microscope (SOM) for the study of the degradation mechanisms of optoelectronic devices is discussed. High sensitivity and spatial resolution in the localization of defects are demonstrated, unique analytical schemes are described, and the cofocal photoluminescence (CPL) technique is introduced. Theoretical analysis and computations support the experimental results.<>

Keywords

OBIC; failure analysis; optical microscopy; optoelectronic devices; photoluminescence; reliability; semiconductor device testing; OBIC; cofocal photoluminescence; defects localisation; degradation mechanisms; failure physics; optical beam induced current; optoelectronic devices; scanning optical microscope; spatial resolution; Degradation; Optical beams; Optical filters; Optical microscopy; Optical sensors; Optoelectronic devices; Photoluminescence; Physics; Scanning electron microscopy; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1993. 31st Annual Proceedings., International

Conference_Location

Atlanta, GA, USA

Print_ISBN

0-7803-0782-8

Type

conf

DOI

10.1109/RELPHY.1993.283271

Filename

283271