Title :
Room-temperature operation of InGaAs-based hot-electron transistors
Author :
Moise, T.S. ; Seabaugh, A.C. ; Beam, E.A., III ; Kao, Y.C. ; Randall, J.N.
Author_Institution :
Central Research Laboratories - Texas Instruments Incorporated
fDate :
6/15/1905 12:00:00 AM
Keywords :
Electrons; Energy consumption; Indium compounds; Indium gallium arsenide; Instruments; Laboratories; RLC circuits; Temperature; Transistors; Voltage;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009610
