Title :
Split-gate InAs quantum wire device operated at 80K
Author :
Yoh, Kanii ; Nishida, Akira ; Inoue, Masataka
Author_Institution :
Osaka Institute of Technology
fDate :
6/15/1905 12:00:00 AM
Keywords :
Abstracts; Buffer layers; Gallium arsenide; Gold; Split gate flash memory cells; Substrates; Temperature; Voltage; Wet etching; Wire;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009611
