DocumentCode
1725763
Title
A novel quantum effect fet with resonantly modulated transfer characteristics
Author
Ohno, Y. ; Tsuchiya, M. ; Sakaki, H.
Author_Institution
Institute of Industrial Science, Univ. of Tokyo
fYear
1993
fDate
6/15/1905 12:00:00 AM
Firstpage
132
Lastpage
133
Keywords
Degradation; Double-gate FETs; Electron mobility; Energy states; Gallium arsenide; Intrusion detection; Optical scattering; Particle scattering; Resonance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1993. 51st Annual
Type
conf
DOI
10.1109/DRC.1993.1009612
Filename
1009612
Link To Document