Examination of the SEU sensitivity of GaAs MESFETs via 2-D computer simulation and picosecond charge collection experiments

Author

Weatherford, T.R. ; McMorrow, D. ; Curtice, W.R. ; Campbell, A.B. ; Knudson, A.R.

Author_Institution

SFA Inc., Landover, MD, USA

fYear

1993

Firstpage

357

Lastpage

363

Abstract

GaAs MESFET ICs have exhibited a high sensitivity to single event upset (SEU) effects. Two-dimensional computer simulations indicate that this sensitivity is a consequence of an electron-hole plasma created by the incident ion. This plasma modifies the fields in the device inducing current between the source and drain. These conclusions are supported by picosecond charge collection experiments.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; digital simulation; gallium arsenide; radiation effects; reliability; semiconductor device models; sensitivity analysis; 2D simulation; GaAs; GaAs MESFETs; SEU sensitivity; computer simulation; electron-hole plasma; picosecond charge collection experiments; single event upset; Aerospace electronics; Computer simulation; Gallium arsenide; MESFETs; Plasma applications; Plasma devices; Plasma simulation; Plasma sources; Single event upset; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1993. 31st Annual Proceedings., International

Conference_Location

Atlanta, GA, USA

Print_ISBN

0-7803-0782-8

Type

conf

DOI

10.1109/RELPHY.1993.283275

Filename

283275

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1725839