Title :
InAs bipolar transistors: a path to high-performance cryogenic electronics
Author :
Dodd, P.E. ; Melloch, M.R. ; Lundstrom, M.S. ; Woodall, J.M. ; Pettit, D.
Author_Institution :
IBM Thomas J. Watson Research Center
fDate :
6/15/1905 12:00:00 AM
Keywords :
Bipolar transistors; Cryogenic electronics; Current density; Electrons; Indium phosphide; Leakage current; Photonic band gap; Substrates; Surface resistance; Temperature;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009621
