Title :
Normal incidence detector using Ge quantum well structures grown on Si [100]
Author :
Lee, Chanho ; Chun, S.K. ; Wang, K.L.
Author_Institution :
University of California at Los Angeles
fDate :
6/15/1905 12:00:00 AM
Keywords :
Detectors; Doping; Electromagnetic wave absorption; Electrons; Ellipsoids; Infrared spectra; Laboratories; Optical polarization; Silicon germanium; Substrates;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009622
