DocumentCode
1725962
Title
Normal incidence detector using Ge quantum well structures grown on Si [100]
Author
Lee, Chanho ; Chun, S.K. ; Wang, K.L.
Author_Institution
University of California at Los Angeles
fYear
1993
fDate
6/15/1905 12:00:00 AM
Firstpage
156
Lastpage
157
Keywords
Detectors; Doping; Electromagnetic wave absorption; Electrons; Ellipsoids; Infrared spectra; Laboratories; Optical polarization; Silicon germanium; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1993. 51st Annual
Type
conf
DOI
10.1109/DRC.1993.1009622
Filename
1009622
Link To Document