Title :
Gate oxide degradation due to trapping of positive charges during Fowler-Nordheim stress at low electron fluence: a rigorous model
Author :
Samanta, Pias ; Sarka, C.K.
Author_Institution :
Dept. of Phys., Jadavpur Univ., Calcutta, India
Abstract :
Gate oxide degradation has been theoretically investigated in n +-polySi-gate metal-oxide-semiconductor (MOS) capacitors during low fluence (⩽0.01 C/cm2) Fowler-Nordheim (FN) injection from (100) n-Si at a wide range (6-12 MV/cm) of oxide electric field. Oxide thicknesses were 22, 27 and 33 nm. Trapped positive charge induced oxide degradation is modeled with a new coupled trapping dynamics based on tunneling electron initiated band to band impact ionization (BTBI) and trap ionization (TTBI) in the oxide gap. In addition, we have compared the degradation during and FN stress at constant current and constant gate voltage
Keywords :
MOS capacitors; electron traps; impact ionisation; semiconductor device models; tunnelling; Fowler-Nordheim stress; Si; band to band impact ionization; coupled trapping dynamics; electron tunneling; gate oxide degradation; low fluence electron injection; model; n+-polySi-gate MOS capacitor; oxide electric field; oxide gap; positive charge trapping; trap ionization; Charge carrier processes; Degradation; Electron traps; Ionization; MOS capacitors; MOS devices; Petroleum; Photonic band gap; Stress; Tunneling;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.632918
