DocumentCode :
1726010
Title :
Doping-spike LWIR PtSi schottky IR detector fabricated by molecular beam epitaxy
Author :
Lin, T.L. ; Park, J. ; George, T. ; Jones, E.W.
Author_Institution :
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology
fYear :
1993
fDate :
6/15/1905 12:00:00 AM
Firstpage :
162
Lastpage :
163
Keywords :
Boron; Dark current; Doping; Infrared detectors; Infrared sensors; Molecular beam epitaxial growth; Schottky barriers; Sensor arrays; Space technology; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1993. 51st Annual
Type :
conf
DOI :
10.1109/DRC.1993.1009625
Filename :
1009625
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1726010
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