DocumentCode
1726015
Title
Corrosion behaviour of thin-film metallizations on CVD W and sputtered W-Ti barrier layers
Author
Griffin, A.J., Jr. ; Hernández, S.E. ; Brotzen, F.R. ; Lawrence, J.D. ; McPherson, J.W. ; Dunn, C.F.
Author_Institution
Dept. of Mech. Eng. & Mater. Sci., Rice Univ., Houston, TX, USA
fYear
1993
Firstpage
327
Lastpage
333
Abstract
The results of a study using DC polarization techniques are explained on the basis of the galvanic couple formed between the metallization and the barrier layer, as well as the difference between the surface topographies of CVD W and sputtered W-Ti (10%). A galvanic series developed for several couples was used to compare materials that exhibited a strong tendency to corrode, or were more anodic, to those which did not, or were more noble. Although the galvanic series revealed that the CVD W and sputtered W-Ti (10%) barrier metals were more noble than Al, polarization scans demonstrated that the Al and the W-Ti (10%) barrier layers exhibited passive behavior and were not as susceptible to corrosion because of the protection afforded by a protective oxide layer. In addition, the corrosion rate was enhanced by the increased cathodic surface area afforded by the CVD W, which acted as an efficient cathode. Immersion tests substantiated these results.<>
Keywords
CVD coatings; aluminium alloys; copper alloys; corrosion; metallisation; silicon alloys; sputtered coatings; surface topography; Al; CVD W; DC polarization techniques; cathodic surface area; galvanic couple; galvanic series; protective oxide layer; sputtered W-Ti barrier layers; surface topographies; thin-film metallizations; Cathodes; Corrosion; Galvanizing; Metallization; Polarization; Protection; Sputtering; Surface topography; Testing; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1993. 31st Annual Proceedings., International
Conference_Location
Atlanta, GA, USA
Print_ISBN
0-7803-0782-8
Type
conf
DOI
10.1109/RELPHY.1993.283280
Filename
283280
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