Anisotropic Inter-Poly Dielectric technology for conventional floating gate type flash memory

Author

Kikushima, Fumie ; Sakamoto, Wataru ; Matsuo, Kenshi ; Sekine, Keisuke ; Arai, Fumihito ; Kamigaki, Tetsuya

Author_Institution

Adv. Memory Dev. Center, Toshiba Corp. Semicond. & Storage Products Co., Yokkaichi, Japan

fYear

2014

fDate

18-21 May 2014

Firstpage

1

Lastpage

3

Abstract

Anisotropic Inter-Poly Dielectric (AIS IPD) has been successfully developed. It enables center SiN thickness to be thicker at Floating-Gate (FG) top and thinner at FG side. Using AIS IPD, both programming speed and program saturation threshold voltage improve without reliability degradation even if the IPD physical thickness at FG side is about 2nm thinner than conventional IPD. Therefore, AIS IPD is one of the key technologies for BL pitch scaling in conventional FG type flash memory.

Keywords

flash memories; silicon compounds; AIS IPD; SiN; anisotropic inter-poly dielectric technology; conventional floating gate type flash memory; physical thickness; pitch scaling; program saturation threshold voltage; programming speed; reliability degradation; Dielectrics; Flash memories; Nonvolatile memory; Periodic structures; Programming; Silicon; Silicon compounds; Flash momory; Inter-poly dielectric; bit-line pitch scaling;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2014 IEEE 6th International

Conference_Location

Taipei

Print_ISBN

978-1-4799-3594-9

Type

conf

DOI

10.1109/IMW.2014.6849362

Filename

6849362