Title :
AC electromigration characterization and modeling of multilayered interconnects
Author :
Ting, L.M. ; May, J.S. ; Hunter, W.R. ; McPherson, J.W.
Author_Institution :
Texas Instrum. Inc, Dallas, TX, USA
Abstract :
The AC electromigration of multilayered interconnect systems consisting of TiW-AlSiCu and CVD W-AlSiCu is studied under stress of repetitive dual-pulse current waveforms at 2 MHz. By using a general AC waveform in which the peak current density of the first pulse j/sub 1/ is fixed and the second is varied from +j/sub 1/ to -j/sub 1/, a continuous electromigration spectrum from DC through pulsed DC to pure AC conditions is obtained. Although an average current model fits the data well, there is a singularity in the median time-to-failure at pure-AC conditions. To avoid this singularity, a modification of the average current model, called the average current recovery model, is developed. It heuristically accounts for the degree of damage recovery during opposite-polarity pulses through a single recovery parameter.<>
Keywords :
CVD coatings; aluminium alloys; circuit reliability; copper alloys; electromigration; failure analysis; metallisation; silicon alloys; titanium alloys; tungsten; tungsten alloys; 2 MHz; AC electromigration characterization; CVD W layer; TiW-AlSiCu; W-AlSiCu; average current recovery model; damage recovery; modeling; multilayered interconnect systems; opposite-polarity pulses; peak current density; repetitive dual-pulse current waveforms; Current density; Electromigration; Guidelines; Instruments; Integrated circuit interconnections; Physics; Plasma temperature; Semiconductor process modeling; Stress; Testing;
Conference_Titel :
Reliability Physics Symposium, 1993. 31st Annual Proceedings., International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-0782-8
DOI :
10.1109/RELPHY.1993.283282