Title :
Integration of a multi-layer Inter-Gate Dielectric with hybrid floating gate towards 10nm planar NAND flash
Author :
Breuil, L. ; Blomme, P. ; Tan, C.-L. ; Lisoni, J.G. ; Souriau, L. ; Zahid, M.B. ; Richard, O. ; Bender, Hugo ; Van den bosch, G. ; Van Houdt, J.
Abstract :
We demonstrate the integration of multi-layer Inter-Gate Dielectrics (IGD) together with a thin Hybrid Floating Gate (HFG), in aggressively scaled planar NAND cells. The results show that excellent memory performance is obtained in short gate length transistors, with good retention and endurance. Simulations indicate that such gate stacks can drive the planar NAND Flash scaling down to 10 nm node.
Keywords :
NAND circuits; dielectric materials; flash memories; aggressively scaled planar NAND cells; gate stacks; hybrid floating gate; memory performance; multilayer inter-gate dielectric; planar NAND flash; short gate length transistors; size 10 nm; Aluminum oxide; Couplings; Dielectrics; Flash memories; Logic gates; Nonvolatile memory; Tin; High-k dielectric; Hybrid Floating Gate; Inter-Gate Dielectric; NAND Flash;
Conference_Titel :
Memory Workshop (IMW), 2014 IEEE 6th International
Conference_Location :
Taipei
Print_ISBN :
978-1-4799-3594-9
DOI :
10.1109/IMW.2014.6849363
