Title :
Undoped SiGe heterostructure field effect transistors
Author :
Jackson, T.N. ; Nelson, S.F. ; Chu, J.O. ; Meyerson, B.S.
Author_Institution :
The Pennsylvania State University
fDate :
6/15/1905 12:00:00 AM
Keywords :
Buffer layers; Electrons; Epitaxial layers; FETs; Germanium silicon alloys; HEMTs; Insulation; MISFETs; MODFETs; Silicon germanium;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009629
