• DocumentCode
    1726096
  • Title

    A Fully Realized `Field Balanced´ TrenchMOS Technology

  • Author

    Peake, Steven T. ; Rutter, Phil ; Hodgskiss, Steve ; Gajda, Mark ; Irwin, Neil

  • Author_Institution
    NXP Semicond., Stockport
  • fYear
    2008
  • Firstpage
    28
  • Lastpage
    31
  • Abstract
    This paper presents an optimized low voltage Power MOSFET technology with a specific on-state resistance that surpasses that previously achievable with conventional TrenchMOS structures. Typical specific on- state resistances of 5.4 mOmega mm2 and 8.9 mOmega mm2 (plusmn0.8 mOmega mm2) for avalanche voltages of 26.5V and 35.5V respectively have been achieved. These values compare favorably with the specific on-state resistances recently reported for the more complex charge-balanced (RESURF) structures.
  • Keywords
    low-power electronics; power MOSFET; TrenchMOS technology; low voltage power MOSFET technology; on-state resistance; voltage 26.5 V; voltage 35.5 V; Conductivity; Doping; Electric resistance; Immune system; Low voltage; MOSFET circuits; PIN photodiodes; Power MOSFET; Power semiconductor devices; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    978-1-4244-1532-8
  • Electronic_ISBN
    978-1-4244-1533-5
  • Type

    conf

  • DOI
    10.1109/ISPSD.2008.4538889
  • Filename
    4538889
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1726096