Title :
A Fully Realized `Field Balanced´ TrenchMOS Technology
Author :
Peake, Steven T. ; Rutter, Phil ; Hodgskiss, Steve ; Gajda, Mark ; Irwin, Neil
Author_Institution :
NXP Semicond., Stockport
Abstract :
This paper presents an optimized low voltage Power MOSFET technology with a specific on-state resistance that surpasses that previously achievable with conventional TrenchMOS structures. Typical specific on- state resistances of 5.4 mOmega mm2 and 8.9 mOmega mm2 (plusmn0.8 mOmega mm2) for avalanche voltages of 26.5V and 35.5V respectively have been achieved. These values compare favorably with the specific on-state resistances recently reported for the more complex charge-balanced (RESURF) structures.
Keywords :
low-power electronics; power MOSFET; TrenchMOS technology; low voltage power MOSFET technology; on-state resistance; voltage 26.5 V; voltage 35.5 V; Conductivity; Doping; Electric resistance; Immune system; Low voltage; MOSFET circuits; PIN photodiodes; Power MOSFET; Power semiconductor devices; Silicon;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538889
