An IGCT chip set for 7.2 kV (RMS) VSI application

Author

Nistor, Iulian ; Scheinert, Maxi ; Wikström, Tobias ; Lüscher, Matthias

Author_Institution

Corp. Res., ABB Switzerland Ltd., Baden-Dattwil

fYear

2008

Firstpage

36

Lastpage

39

Abstract

In this paper we present a novel Integrated Gate- Commutated Thyristor (IGCT) for application in medium voltage drives at voltage levels of 7.2kV RMS or more. Measurements of over 11kV blocking-, on-state- and expanded SOA switching behavior are the basis for a detailed description of the performance. The new design features a planar junction termination, in combination with a corrugated p-base. These design concepts provide acceptable turn-on properties and improve turn-off Safe Operating Area (SOA) simultaneously. Improved diode soft reverse recovery at low currents is demonstrated using a combination of deep buffers and the Field Charge Extraction (FCE) concept.

Keywords

invertors; switching convertors; thyristor convertors; IGCT chip set; SOA switching behavior; field charge extraction; integrated gate-commutated thyristor; medium voltage drives; planar junction termination; safe operating area; soft reverse recovery; Application specific integrated circuits; Clamps; Medium voltage; Power semiconductor devices; Semiconductor device measurement; Semiconductor diodes; Semiconductor optical amplifiers; Switches; Switching converters; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on

Conference_Location

Orlando, FL

Print_ISBN

978-1-4244-1532-8

Electronic_ISBN

978-1-4244-1533-5

Type

conf

DOI

10.1109/ISPSD.2008.4538891

Filename

4538891