High frequency, high breakdown AlInAs/GaInAs junction modulated hemts (JHEMTs) with regrown ohmic contacts by MOCVD

Author

Shealy, J.B. ; Hashemi, M.M. ; Kiziloglu, K. ; DenBaars, S.P. ; Mishra, U.K. ; Liu, T.K. ; Brown, J.J. ; Lui, M.M.

Author_Institution

University of California

fYear

1993

fDate

6/15/1905 12:00:00 AM

Firstpage

177

Lastpage

178

Keywords

Contracts; Current density; Electric breakdown; Frequency; Gate leakage; HEMTs; Indium gallium arsenide; MOCVD; MODFETs; Ohmic contacts;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1993. 51st Annual

Type

DOI

10.1109/DRC.1993.1009632

Filename

1009632

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