Title :
A Trial Simulation on the Cosmic Ray Induced Failure of the Long n- Length pin Diodes
Author_Institution :
Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Amagasaki
Abstract :
This paper reports some simulation results on the cosmic ray induced failure of 3000 V-class silicon diodes using the new direct recombination model which had been used in the simulation of 600 V-class diodes [1], Distinct destruction wave forms were not reproduced. However, an unstable operating mode that was peculiar in a long n- -length diode was found. Regarding this instability as the cause of the destruction, the curious empirical facts could be explained consistently.
Keywords :
cosmic ray interactions; elemental semiconductors; p-i-n diodes; silicon; cosmic ray induced failure; direct recombination model; distinct destruction wave forms; pin diodes; silicon diodes; Charge carrier density; Current density; Discrete event simulation; Failure analysis; Integrated circuit modeling; Power semiconductor devices; Radiative recombination; Semiconductor diodes; Silicon; Single event upset; cosmic ray induced failure; direct recombination model; failure mechanism; long n- pin diode; simulation;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538893
