Title :
Soft-error study of DRAMs using nuclear microprobe
Author :
Ohno, Y. ; Kimura, H. ; Sonoda, K. ; Satoh, S. ; Sayama, H. ; Hara, S. ; Takai, M. ; Miyoshi, H.
Author_Institution :
Mitsubishi Electric Corp., Hyogo, Japan
Abstract :
A method for evaluation of soft errors in DRAMs using a nuclear microprobe developed in order to investigate the local sensitive structure is discussed. The susceptibility in the mapping image of a soft error caused by an ion incident onto or near a storage cell in a DRAM can be directly monitored by this method. Soft errors are induced within 4 mu m of the monitored memory cell. The retrograde well formed by MeV ion implantation has experimentally shown a reduction in soft errors. The charge collection into n/sup +/ layers with a retrograde well and a conventional well was estimated through the device simulation. These simulations agreed with the experimental results.<>
Keywords :
DRAM chips; circuit reliability; failure analysis; integrated circuit testing; ion beam effects; ion implantation; ion microprobe analysis; DRAMs; charge collection; device simulation; ion implantation; local sensitive structure; mapping image; n/sup +/ layers; nuclear microprobe; retrograde well; soft errors; Capacitors; Cosmic rays; Image storage; Ion implantation; Laboratories; Large scale integration; Monitoring; Packaging; Random access memory; Research and development;
Conference_Titel :
Reliability Physics Symposium, 1993. 31st Annual Proceedings., International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-0782-8
DOI :
10.1109/RELPHY.1993.283288
