DocumentCode
1726263
Title
BD180 - a new 0.18 μm BCD (Bipolar-CMOS-DMOS) Technology from 7V to 60V
Author
Park, Il-Yong ; Choi, Yong-Keon ; Ko, Kwang-Young ; Yoon, Chul-Jin ; Jun, Bon-Keun ; Kim, Mi-Young ; Lim, Hyon-Chol ; Kim, Nam-Joo ; Yoo, Kwang-Dong
Author_Institution
Analog Bus. Div., Dongbu HiTek, Bucheon
fYear
2008
Firstpage
64
Lastpage
67
Abstract
We present a new BCD technology in a 0.18 μm technology platforms with a capability of 7 to 60V high-voltage devices such as DEMOS and LDMOS. The developed 0.18 mum BCD process provides various kinds of high voltage LDMOS such as 7, 12, 20, 50, 60 V LDMOS transistors for variety of applications. The power LDMOS transistors in the process have very competitive specific on-resistance compared to previous results.
Keywords
CMOS integrated circuits; power bipolar transistors; BCD technology; bipolar-CMOS-DMOS technology; high-voltage device; power LDMOS transistor; size 0.18 mum; voltage 7 V to 60 V; Auditory displays; CMOS logic circuits; CMOS process; CMOS technology; Diodes; EPROM; Logic devices; MIM capacitors; Resistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location
Orlando, FL
Print_ISBN
978-1-4244-1532-8
Electronic_ISBN
978-1-4244-1533-5
Type
conf
DOI
10.1109/ISPSD.2008.4538898
Filename
4538898
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