Title :
Process reliability development for nonvolatile memories
Author :
Dunn, Christopher ; Hefley, P. ; Pope, Simon ; Chong, Darrel ; Desai, Shaishav ; Patel, Pragati ; Baker, Dannon ; Dolby, D. ; Strauss, Tobias ; Gunturi, Sarma ; Wright, Paul ; Sudak, P.
Author_Institution :
Texas Instrum. Inc., Houston, TX, USA
Abstract :
Reliability development during the process design of 0.8- mu m and 1.0- mu m nonvolatile memory technology is discussed. The process development of the passivation system, the polysilicon layer, and the gate oxide are all analyzed. Passivation reliability in terms of data retention, humidity performance, and erasability is presented for various passivation options. A new failure mechanism associated with electronic emission from poly residue is highlighted, and the poly process optimization to eliminate this mechanism is shown. The effect of reoxidized nitrided dielectrics on hot carrier minimization is also evaluated, and the optimal nitridation are reoxidation conditions to achieve hot carrier immunity are presented.<>
Keywords :
EPROM; circuit reliability; environmental degradation; failure analysis; hot carriers; integrated circuit technology; integrated memory circuits; nitridation; oxidation; passivation; 0.8 micron; 1 micron; EPROM; Si; data retention; electronic emission; erasability; failure mechanism; gate oxide; hot carrier immunity; hot carrier minimization; humidity performance; nonvolatile memories; optimal nitridation; optimal reoxidation; passivation system; polysilicon layer; process design; process reliability; reoxidized nitrided dielectrics; Dielectric losses; Etching; Failure analysis; Flash memory; Hot carriers; Humidity; Instruments; Nonvolatile memory; Passivation; Process design;
Conference_Titel :
Reliability Physics Symposium, 1993. 31st Annual Proceedings., International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-0782-8
DOI :
10.1109/RELPHY.1993.283290
