A High Current 3300V Module Employing Reverse Conducting IGBTs Setting a New Benchmark in Output Power Capability

Author

Rahimo, M. ; Schlapbach, U. ; Kopta, A. ; Vobecky, J. ; Schneider, D. ; Baschnagel, A.

Author_Institution

Semicond., ABB Switzerland Ltd., Lenzburg

fYear

2008

Firstpage

68

Lastpage

71

Abstract

In this paper we demonstrate a fully functional high voltage and high current IGBT module rated at 3300 V consisting solely of reverse conducting (RC) IGBT chips. The RC- IGBTs were designed in accordance with the latest Enhanced Planar and Soft Punch Through technology while incorporating an integrated freewheeling diode in the same silicon volume. Future high power IGBT modules with RC-IGBT technology will be capable of providing exceptional electrical performance for the given voltage class in terms of the maximum allowable output current capability.

Keywords

insulated gate bipolar transistors; modules; power bipolar transistors; power semiconductor diodes; IGBT module; RC-IGBT technology; integrated freewheeling diode; output power capability; reverse conducting IGBT chips; Anodes; Doping; Insulated gate bipolar transistors; Plasma applications; Plasma devices; Power generation; Power semiconductor devices; Semiconductor diodes; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on

Conference_Location

Orlando, FL

Print_ISBN

978-1-4244-1532-8

Electronic_ISBN

978-1-4244-1533-5

Type

conf

DOI

10.1109/ISPSD.2008.4538899

Filename

4538899