• DocumentCode
    172634
  • Title

    Feasibility study of emerging non-volatilememory based physical unclonable functions

  • Author

    Le Zhang ; Xuanyao Fong ; Chip-Hong Chang ; Zhi Hui Kong ; Roy, Kaushik

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
  • fYear
    2014
  • fDate
    18-21 May 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The feasibility and quality of Memory-based Physical Unclonable Functions (MemPUFs) based on emerging Non-Volatile Memory (eNVM) technologies (Spin-Transfer Torque Magnetic Random Access Memory, Phase Change RAM, and Resistive RAM) are studied in this paper. MemPUFs using the three technologies were evaluated in terms of reliability, uniqueness and randomness using different sensing modes and under varying operating conditions. Our results show that eNVM based MemPUFs with differential sensing mode exhibit good randomness and reliability. As compared to conventional MemPUFs, eNVM based MemPUFs are better in terms of area cost.
  • Keywords
    MRAM devices; magnetoelectronics; phase change memories; semiconductor device reliability; semiconductor storage; area cost; eNVM based MemPUF; eNVM technologies; emerging nonvolatile memory; feasibility study; phase change RAM; physical unclonable functions; reliability; resistive RAM; sensing modes; spin-transfer torque magnetic random access memory; Entropy; Noise; Phase change random access memory; Reliability; Resistance; Sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2014 IEEE 6th International
  • Conference_Location
    Taipei
  • Print_ISBN
    978-1-4799-3594-9
  • Type

    conf

  • DOI
    10.1109/IMW.2014.6849384
  • Filename
    6849384