DocumentCode
172635
Title
Understanding sources of variations in flash memory for physical unclonable functions
Author
Xu, S.Q. ; Wing-kei Yu ; Suh, G. Edward ; Kan, Edwin C.
Author_Institution
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
fYear
2014
fDate
18-21 May 2014
Firstpage
1
Lastpage
4
Abstract
This paper provides detailed characterizations of physical sources behind Flash memory based Physical Unclonable Functions (FPUFs). Universal process variations in Flash physical systems are identified and decomposed into layout, intrinsic, stress and bit-wise fluctuation sources. The study shows the understanding of systematic variations and noise sources are essential for improving the security and reliability of FPUFs. Bitwise variations are proven to be originated mainly from random dopant fluctuation, which is indeed truly random and impossible to clone. Overall, this paper provides a theoretical foundation for the security of FPUFs whereas previous PUF studies rely only on experimental evidence for its security and entropy.
Keywords
flash memories; PUF studies; bit-wise fluctuation sources; bitwise variations; flash memory; noise sources; physical sources; physical systems; physical unclonable functions; random dopant fluctuation; systematic variations; universal process variations; Correlation coefficient; Flash memories; Fluctuations; Layout; Resource description framework; Security; Systematics; Flash Memory; Physical Modeling; Physical Unclonable Function; Variation Sources;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Workshop (IMW), 2014 IEEE 6th International
Conference_Location
Taipei
Print_ISBN
978-1-4799-3594-9
Type
conf
DOI
10.1109/IMW.2014.6849385
Filename
6849385
Link To Document