Title :
Electrical characterization of read window in reram arrays under different SET/RESET cycling conditions
Author :
Zambelli, Cristian ; Grossi, Alessandro ; Olivo, Piero ; Walczyk, Damian ; Dabrowski, Jerzy ; Tillack, Bernd ; Schroeder, Thomas ; Kraemer, Rolf ; Stikanov, Valeriy ; Walczyk, C.
Author_Institution :
Dipt. di Ing., Univ. di Ferrara, Ferrara, Italy
Abstract :
In this work a SET/RESET investigation in cycling on ReRAM arrays has been performed, in order to find the most reliable SET/RESET operation conditions. The analysis will compare DC and pulsed SET/RESET operations featuring different durations and voltages on previously DC formed 1T-lR4kbits memory arrays. A thorough analysis of the ReRAM reliability joining the cell-to-cell variability analysis to that of cycling evaluations in complete arrays is addressed. A comparison between DC and Pulse SET/RESET in terms of switching yield, read window, device-to-device uniformity and bit error rate is reported. Finally, the impact of a temperature bake at 1250C on a cycled array is shown to study the temperature impact on the array variability.
Keywords :
integrated circuit reliability; random-access storage; ReRAM arrays; ReRAM reliability; SET-RESET cycling conditions; cell-to-cell variability analysis; cycling evaluation; electrical characterization; memory array; read window; Bit error rate; Decoding; Hafnium compounds; Materials; Reliability; Switches; Tin;
Conference_Titel :
Memory Workshop (IMW), 2014 IEEE 6th International
Conference_Location :
Taipei
Print_ISBN :
978-1-4799-3594-9
DOI :
10.1109/IMW.2014.6849387
