Title :
A novel tite buffered Cu-GeSbTe/SiO2 electrochemical resistive memory (ReRAM)
Author :
Lin, Yu-Yu ; Lee, Feng-Ming ; Chen, Yi-Chou ; Chien, Wei-Chih ; Yeh, Chiao-Wen ; Hsieh, Kuang-Yeu ; Lu, Chih-Yuan
Author_Institution :
Emerging Central Lab., Macronix Int. Co., Ltd., Hsinchu, Taiwan
Abstract :
A novel solid-electrolyte based electrochemical induced conductive bridge (CB) resistive memory (ReRAM) is fabricated and characterized. The new device consists of a Cu-doped GeSbTe ion source, a SiO2 memory layer, and a TiTe ion buffer layer. The ion-buffer layer separates the Cu conducting path from the Cu-ion supply layer thus greatly increases the stability. This tri-layer device greatly improves reliability, yet maintains both low thermal budget BEOL processing and excellent electrical properties.
Keywords :
antimony compounds; copper; electrochemical devices; germanium compounds; integrated circuit reliability; random-access storage; silicon compounds; solid electrolytes; titanium compounds; Cu conducting path; Cu-GeSbTe-SiO2; Cu-ion supply layer; ReRAM; SiO2 memory layer; TiTe; TiTe ion buffer layer; buffered electrochemical resistive memory; electrical property; electrochemical induced conductive bridge resistive memory; low thermal budget BEOL processing; reliability; solid electrolyte resistive memory; trilayer device; Annealing; Bridge circuits; Buffer layers; Copper; Programming; Resistance;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556183
