Title :
Application of a statistical compact model for Random Telegraph Noise to scaled-SRAM Vmin analysis
Author :
Tanizawa, M. ; Ohbayashi, S. ; Okagaki, T. ; Sonoda, K. ; Eikyu, K. ; Hirano, Y. ; Ishikawa, K. ; Tsuchiya, O. ; Inoue, Y.
Author_Institution :
Renesas Technol. Corp., Itami, Japan
Abstract :
A statistical compact RTN (Random Telegraph Noise) model with a fixed Vth shift and Vgs dependent trap time constants is proposed. It accurately reproduces the experimental observation of larger Vth fluctuation at higher |Vgs|. The model is also applied to analysis of SRAM Vmin fluctuation and finds out the distribution follows a log-normal statistics.
Keywords :
SRAM chips; integrated circuit noise; random noise; statistical analysis; log normal statistics; random telegraph noise; scaled SRAM; statistical compact model; trap time constant; Analytical models; Fluctuations; MOS devices; Mathematical model; Random access memory; Sensitivity; Transistors;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556184
