• DocumentCode
    1726430
  • Title

    Application of a statistical compact model for Random Telegraph Noise to scaled-SRAM Vmin analysis

  • Author

    Tanizawa, M. ; Ohbayashi, S. ; Okagaki, T. ; Sonoda, K. ; Eikyu, K. ; Hirano, Y. ; Ishikawa, K. ; Tsuchiya, O. ; Inoue, Y.

  • Author_Institution
    Renesas Technol. Corp., Itami, Japan
  • fYear
    2010
  • Firstpage
    95
  • Lastpage
    96
  • Abstract
    A statistical compact RTN (Random Telegraph Noise) model with a fixed Vth shift and Vgs dependent trap time constants is proposed. It accurately reproduces the experimental observation of larger Vth fluctuation at higher |Vgs|. The model is also applied to analysis of SRAM Vmin fluctuation and finds out the distribution follows a log-normal statistics.
  • Keywords
    SRAM chips; integrated circuit noise; random noise; statistical analysis; log normal statistics; random telegraph noise; scaled SRAM; statistical compact model; trap time constant; Analytical models; Fluctuations; MOS devices; Mathematical model; Random access memory; Sensitivity; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2010 Symposium on
  • Conference_Location
    Honolulu
  • Print_ISBN
    978-1-4244-5451-8
  • Electronic_ISBN
    978-1-4244-5450-1
  • Type

    conf

  • DOI
    10.1109/VLSIT.2010.5556184
  • Filename
    5556184
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1726430