Analysis and prospect of local variability of drain current in scaled MOSFETs by a new decomposition method

Causes of drain current local variability are analyzed by decomposing into current variability components. Besides V_TH and G_m components, it is newly found that effects of “current onset” variability caused by channel potential fluctuations largely contribute to the current variability and that G_m component is relatively small in the saturation region. It is shown that both V_TH and current onset components decreases with reducing channel dopants, indicating that intrinsic channel is very effective to reduce current variability.